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| savantic semiconductor product specification silicon pnp power transistors 2SB794 2sb795 description with to-126 package darlington high dc current gain low collector saturation voltage complement to type 2sd985 2sd986 applications for use in operating from ic without predriver ,such as hammer driver pinning(see fig.2) pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2SB794 -60 v cbo collector-base voltage 2sb795 open emitter -80 v 2SB794 -60 v ceo collector-emitter voltage 2sb795 open base -80 v v ebo emitter-base voltage open collector -8 v i c collector current (dc) -1.5 a i cm collector current-peak -3.0 a t a =25 1.0 p d total power dissipation t c =25 10 w t j junction temperature 150 t stg storage temperature -55~150 downloaded from: http:///
savantic semiconductor product specification 2 silicon pnp power transistors 2SB794 2sb795 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2SB794 -60 v (br)ceo collector-emitter breakdown voltage 2sb795 i c =-10ma ;i b =0 -80 v v cesat collector-emitter saturation voltage i c =-1a ;i b =-1ma -1.5 v v besat base-emitter saturation voltage i c =-1a ;i b =-1ma -2.0 v 2SB794 v cb =-60v; i e =0 i cbo collector cut-off current 2sb795 v cb =-80v; i e =0 -1.0 a i ebo emitter cut-off current v eb =-5v; i c =0 -2.0 ma h fe-1 dc current gain i c =-0.5a ; v ce =-2v 1000 h fe-2 dc current gain i c =-1a ; v ce =-2v 2000 30000 switching times t on turn-on time 0.5 s t stg storage time 1.0 s t f fall time i c =-1.0a ; i b1 =-i b2 =-1.0ma v cc =-50v;r l =50 b 1.0 s h fe-2 classifications m l k 2000-5000 4000-10000 8000-30000 downloaded from: http:/// savantic semiconductor product specification 3 silicon pnp power transistors 2SB794 2sb795 package outline fig.2 outline dimensions downloaded from: http:/// |
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